主要规格和技术参数
肖特基浸没式场发射高分辨扫描电镜 分辨率:0.7nm(15kV),0.7nm(1kV),3.0nm(5kV、WD10MM、5nA)
主要功能及特色
1.In-lens Schottky Plus Field Emission Electron Gun:Maximum Beam Current: 20 nA 2kV / 500 nA 30 kV
2.Super Hybrid Lens (SHL)
3.Gentle Beam Super High Resolution (GBSH):Maximum sample bias voltage: -5 kV
4.Back Scattered Electron detector: RBEI detector (retractable)
5.Chamber Camera: CMOS camera system
6.Low Vacuum with secondary electron detector for LV
主要附件及配置
1.Oxford EDS : X-Max Extreme
2.Electron Beam Lithography system:Raith ELPHY Quantum